Films of a-SiC: H grown on Si single crystal (100) by plasma-enhanced chemical vapor
deposition (PECVD) are analyzed by Fourier transform infrared (FTIR) spectroscopy …

Silicon carbide films are potential candidates for the development of microsystems with
harsh environmental conditions. In this work, the production of high-purity silicon carbide …

Within this work amorphous SiC is investigated for its applicability in photovoltaic devices.
The temperature stability and dopability of SiC makes this material very attractive for …

Si-rich hydrogenated amorphous silicon carbide (a-Si1− xCx: H) thin films with different
carbon fractions were elaborated by a dc magnetron sputtering system. Their structural and …

The nature of the hydrogen bonds and their influence on film (micro/nano) structure has
been investigated as a function of substrate temperature TS (200–500° C) in hydrogenated …

Due to an attractive combination of chemical and physical properties, silicon carbide (SiC)
thin films are excellent candidates for coatings to be used in harsh environment applications …

Hexagonal SiC thin films have been deposited using radio frequency reactive magnetron
sputtering technique by varying the substrate temperature and other deposition conditions …

SiC thin-films were prepared by RF-magnetron sputtering technique (RMS) with the target of
single crystalline SiC and then annealed. The surface morphology of thin-films was …

Thin a-GeXC1− X: H plasma polymerized films, depending on deposition conditions, can be
produced in two very different structures, namely amorphous semiconductor and amorphous …

The infrared absorption properties of a-SiC: H thin films dependence with the dc magnetron
power density were investigated. The films were deposited in a mixture of CH4, H2 and Ar …