III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions
In recent years, β-Ga2O3/NiO heterojunction diodes have been studied, but reports in the
literature lack an investigation of an epitaxial growth process of high-quality single …
literature lack an investigation of an epitaxial growth process of high-quality single …
Surface modification of AlN using organic molecular layer for improved deep UV photodetector performance
A direct wide bandgap of 6.2 eV, high temperature robustness, and radiation hardness make
aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection …
aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures
In this paper, AlInN nanowire ultraviolet light-emitting diodes (LEDs) with emission at∼ 299
nm have been successfully demonstrated. We have further studied the light extraction …
nm have been successfully demonstrated. We have further studied the light extraction …
InGaN-based nanowires development for energy harvesting and conversion applications
This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-
beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy …
beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy …
Lattice-matched III-nitride structures comprising BAlN, BGaN, and AlGaN for ultraviolet applications
The optical properties of BAlN, BGaN and AlGaN ternary alloys are investigated using hybrid
density functional for the design of lattice-matched optical structures in the ultraviolet …
density functional for the design of lattice-matched optical structures in the ultraviolet …
Time–energy quantum uncertainty: Quantifying the effectiveness of surface defect passivation protocols for low-dimensional semiconductors
The degree of enhancement in radiative recombination in ensembles of semiconductor
nanowires after chemical treatment is quantified within a derived limit by correlating the …
nanowires after chemical treatment is quantified within a derived limit by correlating the …
[HTML][HTML] Piezotronic AlGaN nanowire Schottky junctions grown on a metal substrate
BACKGROUND Piezoelectric nanomaterials have attracted significant attention in the
emerging field of piezotronics, as the piezotronic effect combines the piezoelectricity and …
emerging field of piezotronics, as the piezotronic effect combines the piezoelectricity and …