Recent advances in non-chemically amplified photoresists for next generation IC technology

S Ghosh, CP Pradeep, SK Sharma, PG Reddy… - RSC …, 2016 - pubs.rsc.org
While chemically amplified resists (CARs) have been dominating the semiconductor
industries over the past few decades, particularly in the area of computer chip fabrication …

Towards environmentally friendly processing of ionic liquid-based photoresists with a boosted lithography performance

L Liu, K Song, T Feng, T Song, J Li, S Chen, W Zhao… - Green …, 2023 - pubs.rsc.org
The development of a sustainable process for producing high-performance photoresists is
desirable yet challenging. In this study, we proposed an ionic liquid (IL)-assisted approach …

Overview of materials and processes for lithography

RA Lawson, APG Robinson - Frontiers of nanoscience, 2016 - Elsevier
Computers and other electronic devices are an integral and ubiquitous part of the modern
world. One of the key drivers for the development, power, cost, and availability of these …

Increasing the Sensitivity of Nonchemically Amplified Resists by Oxime Sulfonate-Functionalized Polystyrene

H An, J Chen, Y Zeng, T Yu, S Wang… - ACS Applied Polymer …, 2024 - ACS Publications
Nonchemically amplified resists (n-CARs) based on oxime sulfonate-functionalized
polystyrene (PSOS) were designed and prepared. The component ratios of the oxime …

Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

V Singh, VSV Satyanarayana, SK Sharma… - Journal of Materials …, 2014 - pubs.rsc.org
A novel, non-chemically amplified negative resist was synthesized and characterized for
next generation lithography applications. This resist material was shown to be directly …

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

V Singh, VSV Satyanarayana, N Batina… - Journal of Micro …, 2014 - spiedigitallibrary.org
Although extreme ultraviolet (EUV) lithography is being considered as one of the most
promising next-generation lithography techniques for patterning sub-20 nm features, the …

Triphenylsulfonium salt methacrylate bound polymer resist for electron beam lithography

JB Yoo, SW Park, HN Kang, HS Mondkar, K Sohn… - Polymer, 2014 - Elsevier
A new photoacid generator (PAG) bound polymer containing triphenylsulfonium salt
methacrylate (TPSMA) was synthesized and characterized. The PAG bound polymer was …

Chemically amplified phenolic fullerene electron beam resist

DX Yang, A Frommhold, X Xue, RE Palmer… - Journal of Materials …, 2014 - pubs.rsc.org
Molecular resist materials for electron beam lithography have received significant interest as
a route to reducing line width roughness and improving resolution. However, they have often …

Combinatorial optimization of a molecular glass photoresist system for electron beam lithography.

WA Bauer, C Neuber, CK Ober… - … (Deerfield Beach, Fla.), 2011 - europepmc.org
Electron beam lithography is a powerful technique for the production of nanostructures but
pattern quality depends on numerous interacting process variables. Orthogonal gradients of …

Direct UV patterning of electronically active fullerene films

J Wang, C Larsen, T Wågberg… - Advanced Functional …, 2011 - Wiley Online Library
We utilize UV light for the attainment of high‐resolution, electronically active patterns in [6, 6]‐
phenyl C61‐butyric acid methyl ester (PCBM) films. The patterns are created by directly …