III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

This article reports on the state-of-the-art of the development of aluminum nitride (AlN) thin-
film microelectromechanical systems (MEMS) with particular emphasis on acoustic devices …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

The authors have investigated the influence of growth temperature and scandium
concentration on the piezoelectric response of scandium aluminum nitride (Sc x Al 1− x N) …

Sc-based III-nitride alloys were studied using density functional theory with special quasi-
random structure methodology. Sc x Al 1− x N and Sc x Ga 1− x N alloys are found to be …

Lattice dynamics of body-centered cubic (bcc) V b-VI b group transition metals (TM), and B 1-
type monocarbides and mononitrides of III b-VI b transition metals are studied by means of …

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are
some of the outstanding properties that have made Sc x Al 1− x N a promising material in …

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better
performance and integration than traditional oxide ferroelectrics with semiconductors such …

The nitride semiconductor materials GaN, AlN, and InN, and their alloys and
heterostructures have been investigated extensively in the last 3 decades, leading to several …

We demonstrate the growth of pure wurtzite phase Sc x Al 1− x N with a Sc composition as
high as x= 0.34 on GaN and AlN templates using plasma-assisted molecular beam epitaxy …