The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Atomic Layer Deposition: An Overview | Chemical Reviews ACS ACS Publications C&EN CAS
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

Atomic layer deposition (ALD) has within the past few years received world-wide attention
for manufacturing conformal material layers with thickness in the nanometer range …

High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III–V
semiconductors have long proven elusive. High-permittivity (high-κ⁠) gate dielectrics may …

The thermal atomic layer etching (ALE) of SiO2 was performed using sequential reactions of
trimethylaluminum (TMA) and hydrogen fluoride (HF) at 300° C. Ex situ X-ray reflectivity …

The paper reviews our recent progress and current challenges in implementing advanced
gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS …