This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a
triple metal gate (VTG-TFET). We obtained improved switching characteristics for the …

Improvements in the VLSI industry have always been striving to justify the Moore's law by
implanting, twice count transistors from the existing one. This law has made a significant …

Power dissipation is the key factor that is considered while designing low-power circuits.
Complementary metal oxide semiconductor (CMOS) technology faces a major challenge in …

The objective of this paper is to investigate the effect of interface trap charges (ITC) on
Boolean functionality of n-type vertical TFET structure with and without gate overlap (HJ …

This chapter provides an overview of the message-oriented architectural pattern. The core
components of this type of system are explained, and an overview of common messaging …

The unique characteristics of nanowire field effect transistors (NW FETs), such as high
electron mobility, low power consumption, and scalability, have made them a promising …

In this paper; we propose DMDG-GDOV TFET device structure for low leakage current.
Considering the potential benefits of DMDG-TFET, emphasize with Gate Drain Overlap …

This chapter presents static random access memory (SRAM) cell design for low power
applications. It is well known that the mathematical modeling and manual computations of …

In recent decades, photovoltaic technology has significantly advanced, leading to cost-and
energy-efficient solutions. One of the promising approaches that has led to significant …

Generally, the current application areas in communication are completely dependent on the
establishment and operation of (camera-based/non-camera-based) wireless sensor …