Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature

N Hong Tran, B Huy Le, S Fan, S Zhao, Z Mi… - Applied Physics …, 2013 - pubs.aip.org
We report on a detailed study of the structural and optical properties of nonstoichiometric
nitrogen-rich InN grown on sapphire substrates, by migration enhanced afterglow …

Electron Accumulation in InN Thin Films and Nanowires

L Colakerol Arslan, KE Smith - Low-Dimensional and Nanostructured …, 2016 - Springer
An overview on the electron accumulation layer on InN thin film and nanowire surfaces is
provided. The interactions between the valence and conduction bands due to the narrow …

p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

S Zhao, Z Mi, BH Le - Gallium Nitride Materials and Devices IX, 2014 - spiedigitallibrary.org
In this paper, we demonstrate that p-type InN nanowires can be realized by direct
magnesium (Mg) doping. X-ray photoelectron spectroscopy experiments on the sidewalls of …

Hourglass-graded heterostructures as a possible route towards extremely efficient light emitting diodes

J Jamaux, A Iqbal, KH Bevan - Semiconductor Science and …, 2015 - iopscience.iop.org
In this study a theoretical analysis of hourglass-graded light emitting diodes (LEDs) is
provided. The term hourglass-grading refers to the placement of a wide band gap material at …