Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Hetero-epitaxial growth of GaN often leads to high density of threading dislocations, which
poses a significant challenge to the promotion of the performance of GaN-based devices. In …

Molecular dynamics (MD) simulation was applied to investigate the deposition process of
gallium nitride (GaN) films on aluminum nitride (AlN) substrates, in which the effects of …

Insulation faults in sulfur hexafluoride (SF6-based high-voltage insulation equipment are
accompanied by SF6 decomposition; hence, electrical equipment insulation condition …

Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …

We investigated the excitation-dependent spatially resolved luminescence properties of
InGaN/GaN light-emitting diodes (LEDs) with air-cavity arrays using scanning near-field …

In this study, a 3× 3 blue micro-LED array with a pixel size of 10× 10 μm2 and a pitch of 15
μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic …

微米级发光二极管(Micro light-emitting diode, Micro-LED) 器件具有高亮度, 高耐热性, 长寿命,
低功耗以及极短的响应时间等优点, 被视为下一代显示技术的基石, 可满足手机, 可穿戴手表 …

We report the realization of a dislocation prevention and thermal transport network by
adopting carbon nanotube (CNT) films on a commercially available patterned sapphire …

In this work, low-threshold resonant lasing emission was investigated in undoped and Mg-
doped GaN thin films on interfacial designed sapphire substrates. The scattering cross …