In this work, we investigate by means of simulations the performance of basic digital, analog,
and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and …

A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was
fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based …

In this paper, a new Gallium Nitride (GaN) Fin Field Effect Transistor (FinFET) with Schottky
Source/Drain is proposed for detection of breast cancer cells by studying the change in …

This paper presents a fin field-effect transistor (FinFET)-based single circuit (FSC) used to
realize an active-high output decoder (AHD), active-low output decoder (ALD) and digital …

Along with radiation sensing, necessity to study and design reliable radiation hardened
devices is also increasing now-a-days. These devices are tolerant to high dosage of …

In this paper operational transconductance amplifiers (OTA) were designed with nanowire
(NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) …

This work analyzes the performance of measured Tunneling Field-Effect Transistors (TFET)
when applied to analog circuits. The method uses a look-up table based behavioral model …

Conventional carry select adders (CCSA) have two stages and are followed by multiplexers.
CCSAs use ripple carry adders at two stages, which will introduce much delay due to carry …

This work proposes a simple methodology for using Tunnel-FET devices, which do not have
any accurate first order analytic models, for allowing the integrated circuit simulation with …

Electrical characterization of a silicon nanowire Tunnel Field Effect Transistor (TFET) is used
to construct a lookup table in order to model and simulate analog circuit through Verilog-A …