Reflection high-energy electron diffraction (RHEED) is widely used to characterize the
surface structure of single crystals. Moreover, RHEED has become a standard tool to …

The generation of photon pairs from nanoscale structures with high rates is still a challenge
for the integration of quantum devices, as it suffers from parasitic signals from the substrate …

The accurate control of the crystal phase in III–V semiconductor nanowires (NWs) is an
important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well …

The control of the crystal phase in self-catalyzed nanowires (NWs) is one of the central
remaining open challenges in the research field of III/V semiconductor NWs. While several …

Hexagonal group IV materials like silicon and germanium are expected to display
remarkable optoelectronic properties for future development of photonic technologies …

When semiconducting nanowires are grown by vapor–liquid–solid mechanism using gold
as catalyst, the first stages, ie, gold deposition and subsequent annealing, are of prime …

Abstract Crystal Phase Quantum Dots (CPQDs) offer promising properties for quantum
communication. How CPQDs can be formed in Au‐catalyzed GaAs nanowires using …

Design of novel nanowire (NW) based semiconductor devices requires deep understanding
and technological control of NW growth. Therefore, quantitative feedback over the structure …

We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell
nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents …

Nanowire heterostructures of the oxide (shell)–semiconducting (core) type are of interest for
various applications in energy harvesting, such as electrodes for photocatalysis and in …