Surface nanopatterning induced by ion beam irradiation (IBI) has emerged as an effective
nanostructuring technique since it induces patterns on large areas of a wide variety of …

Abstract Si (1 0 0) is bombarded with 200 keV Ar+ ion beam at oblique incidence with
fluences ranging from 3× 10 17 ions/cm 2 to 3× 10 18 ions/cm 2. The surface morphology of …

Insight mechanisms involved in the evolution of surface morphology and wettability of 100
MeV Ag-ion-treated Ag thin films have been studied using thermal spike and fractal analysis …

Cleaning the n-GaAs surface with low-energy Ar+ ions, required in X-ray photoelectron
spectroscopy (XPS), has been recently shown to drastically change the core-level binding …

Electronic structure and chemical composition of GaAs-based semiconductors are
considered to be well characterized by photoelectron spectroscopy and other surface …

Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar+ oblique ion
beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3× …

A new hydrodynamic mechanism is proposed for the ion beam-induced surface patterning
on solid surfaces. Unlike the standard mechanisms based on the ion beam impact …

In the present report, the surface erosion of the thin films of barium fluoride (BaF 2)
deposited on different substrates (Glass, Silicon, and Aluminum) using the electron beam …

The surface chemistry of GaAs (100) with 50-keV Ar+ ion beam irradiation at off-normal
incidence has been investigated in order to elucidate the surface nano-structuring …

Irradiation of Ag thin films with 100 MeV Ag ions leads to the formation of Ag nanoparticles
on the surface as well as on the catcher, due to electronic energy loss mediated sputtering of …