The first isolation of graphene opens the avenue for new platforms for physics, electronic
engineering, and materials sciences. Among several kinds of synthesis approaches …

Transition metal dichalcogenides (TMDCs), the two dimensional layered structures with
significant band gap have been considered as noteworthy candidates for advanced …

Abstract Recently, deep-ultraviolet (DUV) photodetectors with useful functions including
transparency and flexibility have been developed for a real-time environmental monitoring, a …

Improvement of the electrical and photoelectric characteristics is essential to achieve an
advanced performance of field-effect transistors and optoelectronic devices. Here we have …

Although the electronic properties of graphene layers can be modulated by various doping
techniques, most of doping methods cost degradation of structural uniqueness or electrical …

Graphene is a promising material for next-generation electronic devices. The effect of UV-
irradiation on the graphene devices, however, has not been fully explored yet. Here we …

Here, we demonstrate a doping technique which remarkably improves the electrical and
photoelectric characteristics of a WS2 field effect transistor (FET) by chemical doping. The …

A 3-terminal device with a tunable Schottky barrier controls the charge transport across a
vertically stacked structure named “barristor”-one composed of a graphene/rhenium …

The tuning of charge carrier density of graphene is an essential factor to achieve the
integration of high-efficiency electronic and optoelectronic devices. We demonstrate the …

We have prepared borocarbonitrides of various compositions with extended sheet
morphology, by the reaction of few-layer graphene with boric acid and urea at 900° C and …