The technological and societal impacts of electronic devices based on Ge, Si, and
compound semiconductors like GaAs have been profound, fueling the decades long quest …

Here we report on the degradation processes of Au/Ni/-Ga {2} O {3} Schottky diodes under
forward bias stress which is related to their on-state reliability. In some diodes, we find a bias …

In this study, we have experimentally investigated the temperature endurance capability of
high-quality Pt-based Schottky Barrier Diodes (SBDs) fabricated on halide vapor phase …

The low symmetry of monoclinic β-Ga 2 O 3 leads to elaborate intrinsic defects, such as Ga
vacancies split amongst multiple lattice sites. These defects contribute to fast, anisotropic Ga …

The effect of the sintering atmosphere on the structural, electrical, and luminescence
properties of gallium oxide ceramics was studied using X-ray diffraction, scanning electron …

In this paper, GaNbO 4 crystal properties were regulated by Mg 2+ doping. The refractive
indexes, optical properties, and thermal properties were characterized, the influence of Mg …

Monoclinic β-Ga2O3 thin films were grown on heavily doped p-type Si substrate by pulsed
laser deposition (PLD) at growth temperature 700° C and oxygen partial pressure 1× 10–2 …

In this thesis, the chemical and electronic structure of Ga2O3 is investigated by means of
electron and x-ray spectroscopic techniques. Ga2O3 has a wide bandgap (4.4-4.9 eV) …