Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
SH Baek, GW Lee, CY Cho, SN Lee - Scientific Reports, 2021 - nature.com
Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using
AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the …
AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the …
Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
We report on the study of step-graded AlGaN transition layers (TLs) in metalorganic
chemical vapor deposition-grown GaN HEMT-on-silicon toward improving the breakdown …
chemical vapor deposition-grown GaN HEMT-on-silicon toward improving the breakdown …
Performance improvement in NiO x-based GaN MOS-HEMTs
We have illustrated the thermal oxidation of Ni as gate dielectrics to improve the
characteristics of GaN-based metal oxide semiconductor high electron mobility transistors …
characteristics of GaN-based metal oxide semiconductor high electron mobility transistors …
CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing
In this paper, we have demonstrated the effect of InGaN notch on device reliability, including
CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
CV analysis and linearity analysis of an AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
[PDF][PDF] Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure
In this paper, we designed and analyzed the electrical performances of gallium-nitride (GaN)-
based vertical trench metal-oxide-semiconductor field-effect-transistors (MOSFETs) using …
based vertical trench metal-oxide-semiconductor field-effect-transistors (MOSFETs) using …