Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in
linear integrated circuits. In many bipolar technologies, the degradation is greater for …

This book provides a detailed treatment of radiation effects in electronic devices, including
effects at the material, device, and circuit levels. The emphasis is on transient effects caused …

P-type MOS capacitors fabricated in two bipolar processes were examined for ionizing
radiation-induced threshold voltage shifts as a function of total dose, dose rate, temperature …

A physically based comparison between hot-carrier and ionizing radiation stress in BJTs is
presented. Although both types of stress lead to qualitatively similar changes in the current …

The excess base current in an irradiated BJT increases superlinearly with total dose at low-
total-dose levels. In this regime, the excess base current depends on the particular charge …

Radiation-induced gain degradation is compared in two types of lateral PNP bipolar devices
that are identical except for the emitter doping. The devices with heavily-doped emitters …

Effects of oxide-trapped charge and interface traps induced by ionizing radiation, on the
degradation of the electrical properties in NPN bipolar junction transistors (BJTs), are …

The influence of surface carrier concentration on the ideality factor of excess base current (ΔI
B) in gated lateral PNP (GLPNP) bipolar junction transistors (BJTs) induced by 1-MeV …

A possible physical mechanism for bipolar transistor low-dose-rate irradiation response is
discussed. This mechanism is described in terms of shallow electron traps in oxide. The …

Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN
BJT's Page 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 42, NO. 5, MAY 1995 …