[HTML][HTML] β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium
In this work, metalorganic chemical vapor deposition (MOCVD) of (010) β-Ga2O3 with fast
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
growth rates was investigated using trimethylgallium (TMGa) as the gallium (Ga) precursor …
[HTML][HTML] MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
We report on the growth of β-Ga 2 O 3 thin films using trimethylgallium (TMGa) as a source
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates
AFM Anhar Uddin Bhuiyan, Z Feng… - Crystal Growth & …, 2020 - ACS Publications
Single β-phase (100)(Al x Ga1–x) 2O3 thin films were successfully grown on (100) oriented
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
β-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By …
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
A new record‐high room‐temperature electron Hall mobility (μRT= 194 cm2 V− 1 s− 1 at n≈
8× 1015 cm− 3) for β‐Ga2O3 is demonstrated in the unintentionally doped thin film grown on …
8× 1015 cm− 3) for β‐Ga2O3 is demonstrated in the unintentionally doped thin film grown on …