Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel
Q Tran, J Hayden, J Casamento… - 2024 device …, 2024 - ieeexplore.ieee.org
The discovery of ferroelectricity in hafnium zirconium oxide (Hf x Zr 1-x O 2) and related
fluorite materials has spurred interested in ferroelectric devices suitable for integration on …
fluorite materials has spurred interested in ferroelectric devices suitable for integration on …