Progress on carbon nanotube BEOL interconnects
This article is a review of the current progress and results obtained in the European H2020
CONNECT project. Amongst all the research on carbon nanotube interconnects, those …
CONNECT project. Amongst all the research on carbon nanotube interconnects, those …
Quantitative temperature distribution measurements by non-contact scanning thermal microscopy using Wollaston probes under ambient conditions
Temperature measurement using Scanning Thermal Microscopy (SThM) usually involves
heat transfer across the mechanical contact and liquid meniscus between the thermometer …
heat transfer across the mechanical contact and liquid meniscus between the thermometer …
Experimental evaluation of self-heating and analog/RF FOM in GAA-nanowire FETs
In this paper, we report the characterization and modeling of multi-finger gate all around
(GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in …
(GAA) nanowire (NW) FETs (NWFETs) from dc to 14 GHz. The self-heating effect (SHE) in …
Thermal SPICE modeling of FinFET and BEOL considering frequency-dependent transient response, 3-D heat flow, boundary/alloy scattering, and interfacial thermal …
CC Chung, HH Lin, WK Wan… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
High device density and high power density intensify the self-heating effect in scaled FinFET
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …
Elucidating the electrical performance and thermal stability in14-nm FinFETs CMOS technology
Nanoscale device self-heating effects have become an important issue in simulation and
fabrication of Bulk and SOI FinFET transistors. In this work, we have investigated a …
fabrication of Bulk and SOI FinFET transistors. In this work, we have investigated a …
[PDF][PDF] Analogue and RF performances of Fully Depleted SOI MOSFET
JP Raskin - 2019 ISTE OpenScience-Published by ISTE Ltd …, 2019 - openscience.fr
Performance of RF integrated circuit (IC) is directly linked to the analogue and high
frequency characteristics of the transistors, the quality of the back-end of line process as well …
frequency characteristics of the transistors, the quality of the back-end of line process as well …
Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks
CC Chung, BW Huang, HC Lin, T Chou… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A series of multi-correlated recurrent neural networks is used to predict the relative
temperature of inverter chains folded in 3 rows. The circuit hotspot temperature is predicted …
temperature of inverter chains folded in 3 rows. The circuit hotspot temperature is predicted …
Suppression Strategy of Snapback Effect for Multi-Cell RC-IGBT
Z Chang, X Yang, X Hou, H Tang - 2020 IEEE 9th International …, 2020 - ieeexplore.ieee.org
The snapback effect of RC-IGBT occurs when the device transits from the unipolar mode to
the bipolar mode during the turn-on process, which will increase the switching loss and …
the bipolar mode during the turn-on process, which will increase the switching loss and …
Scanning tunneling thermometer
ASC Shastry, CA Stafford - US Patent 11,215,636, 2022 - Google Patents
Various examples are provided related to scanning tunneling thermometers and scanning
tunneling microscopy (STM) techniques. In one example, a method includes simultane ously …
tunneling microscopy (STM) techniques. In one example, a method includes simultane ously …
[HTML][HTML] The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
MH Liao, CP Hsieh, CC Lee - AIP Advances, 2017 - pubs.aip.org
The self-heating effect on Si 1-x Ge x based FinFETs is analyzed and investigated with
different device structures/dimensions, Ge concentration, and operated voltages. The …
different device structures/dimensions, Ge concentration, and operated voltages. The …