We report the growth and characterization of thin (< 35 nm) germanium-carbon alloy (Ge 1−
x C x) layers grown directly on Si by ultrahigh-vacuum chemical vapor deposition, with …

Hall mobilities in a temperature range of 80–300 K have been measured in fully strained Si
1− x Ge x and partially strain-compensated p-type Si 1− x− y Ge x C y alloy layers grown on …

Synthesis and subsequent conventional pyrolysis of polymer precursor
[CCSiMe2CCGeMe2] n (n∼ 12) is reported. Fourier transformed IR and thermogravimetry …

The feasibility of fabrication of an inversion base transistor in the BICFET (Bipolar Inversion
Channel Field Effect Transistor) configuration is investigated in this project. The requisite …

The spectral responses of a series of heterojunction diodes of p-type Ge/sub 1-y/C/sub y/on
n-type Si (100) substrates were measured by Fourier transform infrared (IR) spectroscopy …

Hall effect measurements showed that the addition of carbon could increase the hole
mobility in GeC as compared to that in pure Ge. One possible reason is that the addition of …

New possibilities are presented for high sensitive technology control of epitaxial
semiconductor heterosystems. Transformation of the crystal atomic planes (hkl) parallel to …