Hafnium oxide plays an important role as a dielectric material in various thin-film electronic
devices such as transistors and resistive or ferroelectric memory. The crystallographic and …

We present an ab initio study of the magnetism induced in Zr O 2 dioxide by substitution of
the cation by an impurity from the groups 1 A or 2 A of the Periodic Table (K and Ca). It is …

We have synthesized highly oxygen deficient HfO 2− x thin films by controlled oxygen
engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen …

Over the years, scientists were consistently searching for novel oxide materials that can be
employed in optoelectronic and spintronic devices. In this work, we have explored the …

Covering the key theories, tools, and techniques of this dynamic field, Handbook of
Nanophysics: Principles and Methods elucidates the general theoretical principles and …

Hafnium oxides (HfO 2) retain mechanical resilience, thermal stability, and chemical
resistivity due to which it is used diversely in various high-tech applications in optics and …

Researchers have been consistently looking for new materials that can be integrated in
optoelectronic and spintronic devices. In this research, we investigated the crystalline …

Analysis of photodepopulation of electron traps in HfO 2 films grown by atomic layer
deposition is shown to provide the trap energy distribution across the entire oxide bandgap …

Flexible electronics has attracted considerable attention owing to its enormous potential for
practical applications in various fields. However, the massive strain produced during …

The physics of two-dimensional (2D) materials is always intriguing in their own right. For all
of these elemental 2D materials, a generic characteristic feature is that all the atoms of the …