Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks
J Hertkorn, F Lipski, P Brückner, T Wunderer… - Journal of Crystal …, 2008 - Elsevier
In this study the in situ deposition of SiNx masks by metalorganic vapor phase epitaxy
(MOVPE) has been optimized to achieve c-plane oriented GaN layers on sapphire with a …
(MOVPE) has been optimized to achieve c-plane oriented GaN layers on sapphire with a …
A review of epitaxial metal-nitride films by polymer-assisted deposition
Polymer-assisted deposition is a chemical solution route to high quality thin films. In this
process, the polymer controls the viscosity and binds metal ions, resulting in a …
process, the polymer controls the viscosity and binds metal ions, resulting in a …
Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers
A set of N-polar InN epilayers has been grown at different temperatures by plasma–assisted
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …
Photoreflectance investigation of band gap renormalization and the Burstein–Moss effect in Si doped GaN grown by MOVPE
M Bouzidi, Z Benzarti, I Halidou, S Soltani… - Materials Science in …, 2016 - Elsevier
This work reports on the photoreflectance (PR) study of Si doped GaN layers (GaN: Si) with
different doping levels (2.1× 10 17–2.8× 10 19 cm− 3). GaN: Si samples have been …
different doping levels (2.1× 10 17–2.8× 10 19 cm− 3). GaN: Si samples have been …
Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: optical properties evolution at different …
In this paper, we present a systematic study of the optical properties evolution of GaN films
during the complete growth process on SiN-treated sapphire substrates by atmospheric …
during the complete growth process on SiN-treated sapphire substrates by atmospheric …
Growth of scandium doped GaN by MOVPE
Abstract Scandium (Sc) doped GaN layers (GaN: Sc) were grown on SiN treated sapphire
substrate by atmospheric pressure metal–organic vapor phase epitaxy (AP-MOVPE) using …
substrate by atmospheric pressure metal–organic vapor phase epitaxy (AP-MOVPE) using …
Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures
Al x Ga 1− x N/GaN hetero-structures were grown on SiN-treated (00.1) sapphire substrate
by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE). Characterization …
by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE). Characterization …
Photoreflectance study of GaN grown on SiN treated sapphire substrate by MOVPE
GaN films were grown on silicon nitride (SiN) treated c-plane sapphire substrates in a home-
made vertical reactor by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) …
made vertical reactor by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) …
Study of the partial decomposition of GaN layers grown by MOVPE with different coalescence degree
H Bouazizi, N Chaaben, Y El Gmili, A Bchetnia… - Journal of Crystal …, 2016 - Elsevier
We investigated the partial decomposition of GaN layers grown with different coalescence
degrees by atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) on SiN …
degrees by atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) on SiN …
Optical characterization by photoreflectance of GaN after its partial thermal decomposition
In the current study, we investigated the partial decomposition of GaN layers grown on SiN-
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …