Over the past few decades, researchers have worked with copper oxide nanostructures
(CONs) to explore their applications in renewable energy conversion and generation …

Good stoichiometric CdS films are fabricated using the successive ionic layer adsorption
and reaction (SILAR) technique. Several sets of films are prepared by keeping the number of …

Abstract We fabricated Au/n-InP/In and Au/In 2 S 3/n-InP/In junctions and investigated their
electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n …

Electrical properties of Al/p-type Si/Al metal-semiconductor and Al/V 2 O 5/p-type Si/Al metal–
interfacial layer–semiconductor diodes with and without anodic surface passivation are …

In present paper, the device parameters of tin oxide/n-Si (1 0 0) structure have been
determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) …

We have fabricated the Au/Ni/n-GaN structures and measured their capacitance–frequency
(C–f) and conductance (G/w)-angular frequency (w) characteristics in the temperature range …

In this paper, the V 2 O 5 thin film has been grown on the both p-type semiconductor and
glass substrate by the spray pyrolysis method. For optical and structural properties of thin …

Different chemical methods such as Successive Ionic Layer Adsorption and Reaction
(SILAR), spin coating and spray pyrolysis methods were used to deposite of copper selenide …

Cadmium sulfide (CdS) thin films were electrochemically formed on polycrystalline Au films,
using electrochemical atomic layer deposition (E-ALD) and successive ionic layer …

In view of CdS growth is very impotent for technological importance especially solar
applications; synthesis of this material remains a topic of great interest for researchers by …