This article proposes a high-frequency integrated gate driver for gallium nitride (GaN)
synchronous buck converter. The proposed adaptive bang-bang dead-time control …

Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have
many advantages compared to silicon (Si) MOSFETs: low drain-source resistance, high …

GaN devices operating at reverse conduction region causing excessive conduction loss.
Therefore, the GaN based switching converters are required to minimize the dead-time. This …

In this study, a dead-time control circuit is proposed to generate independent delays for the
high and low sides of half-bridge converter switches. In addition to greatly decreasing the …

This paper proposes a high-speed gate driver integrated circuit (IC) for gallium nitride (GaN)
synchronous buck converter which includes an adaptive bang-bang deadtime modulator to …

Targeting on high switching frequency gallium nitride (GaN) dc-dc buck converter, this paper
presents a 10MHz switching frequency gate driver IC for GaN based synchronous buck …

This paper proposed a monolithic GaN IC for a 4SV-to-72V boost converter which includes a
GaN power device, power diode, gate driver with the internal bootstrap circuit to fully turn on …

This paper presents an integrated gate driver for a GaN-based synchronous buck converter
with a novel dual-edge adaptive dead-time control (DTC) to minimize the dead-time and the …

The extended use of Gallium Nitride (GaN) transistors in power applications, such as
automotive, industrial and power distribution, leads practitioners and researchers to a review …

GaN HEMT can operate at a high switching frequency because of its characteristics, but
there are also related problems. This paper analyzes the negative effects of switching …