[HTML][HTML] Investigation of trap density effect in gate-all-around field effect transistors using the finite element method
M Belkhiria, F Aouaini, S A. Aldaghfag, F Echouchene… - Electronics, 2023 - mdpi.com
Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …
capture and release charge carriers (electrons or holes) in a semiconductor channel …
Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT)
A study based on the numerical simulation of Double Gate JunctionLess Transistor DG-JLT
has been presented under the influence of Trap Charges (TC) inside the oxide or at the …
has been presented under the influence of Trap Charges (TC) inside the oxide or at the …
[HTML][HTML] Implementation of aging mechanism analysis and prediction for XILINX 7-series FPGAs with a 28-nm process
Z Li, Z Huang, Q Wang, J Wang, N Luo - Sensors, 2022 - mdpi.com
Commercial off-the-shelf (COTS) field-programmable gate arrays (FPGAs) with a 28-nm
process have become popular devices for computing systems. Although current generation …
process have become popular devices for computing systems. Although current generation …
Interface traps density extraction through transient measurements in junctionless transistors
This paper presents an extraction method for the interface traps density on Junctionless
Transistors (JNTs) using an adapted charge pumping technique. To the best of our …
Transistors (JNTs) using an adapted charge pumping technique. To the best of our …
NBTI Dependence on Temperature in Junctionless Nanowire Transistors
NG Junior, R Trevisoli, RT Doria - 2021 35th Symposium on …, 2021 - ieeexplore.ieee.org
This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices
when varying the temperature. The results were obtained through simulations validated to …
when varying the temperature. The results were obtained through simulations validated to …
[PDF][PDF] NBTI em transistores sem junções fabricados na tecnologia SOI
N Graziano Júnior - 2022 - repositorio.fei.edu.br
Aqui apresenta-se o estudo do efeito Negative Bias Temperature Instability (NBTI) em
dispositivos Junctionless Nanowire Transistors (JNTs). Primordialmente, dispositivos JNTs …
dispositivos Junctionless Nanowire Transistors (JNTs). Primordialmente, dispositivos JNTs …