The path towards a high-performance solution-processed kesterite solar cell
Despite the promise of thin-film Cu (In, Ga)(S, Se) 2 (CIGSSe) chalcopyrite and CdTe
photovoltaic technologies with respect to reducing cost per watt of solar energy conversion …
photovoltaic technologies with respect to reducing cost per watt of solar energy conversion …
Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology
While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells
have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr− 1 …
have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr− 1 …
Effect of solid-H 2 S gas reactions on CZTSSe thin film growth and photovoltaic properties of a 12.62% efficiency device
DH Son, SH Kim, SY Kim, YI Kim, JH Sim… - Journal of Materials …, 2019 - pubs.rsc.org
We fabricated CZTSSe thin films using optimized SLG-Mo/Zn/Cu/Sn (MZCT) as a stacked
structure and described the phenomenon of Zn elemental volatilization using the MZCT …
structure and described the phenomenon of Zn elemental volatilization using the MZCT …
Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites
The efficiency of kesterite-based solar cells is limited by various non-ideal recombination
paths, amongst others by a high density of defect states and by the presence of binary or …
paths, amongst others by a high density of defect states and by the presence of binary or …
Determination of band gap energy (Eg) of Cu2ZnSnSe4 thin films: On the discrepancies of reported band gap values
SJ Ahn, S Jung, J Gwak, A Cho, K Shin, K Yoon… - Applied Physics …, 2010 - pubs.aip.org
We demonstrate experimental data to elucidate the reason for the discrepancies of reported
band gap energy (E g) of Cu 2 ZnSnSe 4 (CZTSe) thin films, ie, 1.0 or 1.5 eV. E g of the …
band gap energy (E g) of Cu 2 ZnSnSe 4 (CZTSe) thin films, ie, 1.0 or 1.5 eV. E g of the …
Detection of a ZnSe secondary phase in coevaporated Cu2ZnSnSe4 thin films
A Redinger, K Hönes, X Fontané… - Applied Physics …, 2011 - pubs.aip.org
Cu 2 ZnSnSe 4 (CZTSe) thin films are grown by coevaporation. Composition depth profiles
reveal that a Zn rich phase is present at the CZTSe/Mo interface. Raman measurements on …
reveal that a Zn rich phase is present at the CZTSe/Mo interface. Raman measurements on …
Electrodeposited Cu2ZnSnSe4 thin film solar cell with 7% power conversion efficiency
ABSTRACT High performance Cu2ZnSnSe4 (CZTSe) photovoltaic materials were
synthesized by electrodeposition of metal stack precursors followed by selenization. A …
synthesized by electrodeposition of metal stack precursors followed by selenization. A …
Impact of minor phases on the performances of CZTSSe thin-film solar cells
G Altamura, J Vidal - Chemistry of Materials, 2016 - ACS Publications
Cu2ZnSn (S1–x Se x) 4 (CZTSSe) alloys are promising candidates for low-cost and high-
efficiency thin-film solar cells. Compared to CdTe and Cu (In x Ga1–x) Se2, CZTSSe uses …
efficiency thin-film solar cells. Compared to CdTe and Cu (In x Ga1–x) Se2, CZTSSe uses …
Secondary crystalline phases identification in CuZnSnSe thin films: contributions from Raman scattering and photoluminescence
In this work, we present the Raman peak positions of the quaternary pure selenide
compound Cu _2 2 ZnSnSe _4 4 (CZTSe) and related secondary phases that were grown …
compound Cu _2 2 ZnSnSe _4 4 (CZTSe) and related secondary phases that were grown …
Growth and characterization of Cu2ZnSn (S, Se) 4 thin films for solar cells
PMP Salomé, J Malaquias, PA Fernandes… - Solar Energy Materials …, 2012 - Elsevier
Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe4 (CZTSe) with their band gap energies around 1.45
eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By …
eV and 1.0 eV, respectively, can be used as the absorber layer in thin film solar cells. By …