Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Silicon has been the semiconductor of choice for microelectronics largely because of the
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …

Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …

Effective removal of near-interface traps (NITs) in SiO 2/4 H–SiC (0001) structures through
phosphorus incorporation is demonstrated in this paper. Low-temperature capacitance …

We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …

In this paper, current conduction mechanisms of an atomic-layer-deposited HfO 2 gate
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …

Hall-effect measurements of n-channel MOS devices were used to determine the main
scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization …

This paper demonstrates how sodium enhanced oxidation of Si face 4 H‐Si C results in
removal of near-interface traps at the Si O 2∕ 4 H‐Si C interface. These detrimental traps …