Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide
We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into …
transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
ST Pantelides, S Wang, A Franceschetti… - Materials science …, 2006 - Trans Tech Publ
Silicon has been the semiconductor of choice for microelectronics largely because of the
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …
Generation of very fast states by nitridation of the SiO2/SiC interface
H Yoshioka, T Nakamura, T Kimoto - Journal of Applied Physics, 2012 - pubs.aip.org
Fast states at SiO 2/SiC interfaces annealed in NO at 1150–1350 C have been investigated.
The response frequency of the interface states was measured by the conductance method …
The response frequency of the interface states was measured by the conductance method …
Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation
Effective removal of near-interface traps (NITs) in SiO 2/4 H–SiC (0001) structures through
phosphorus incorporation is demonstrated in this paper. Low-temperature capacitance …
phosphorus incorporation is demonstrated in this paper. Low-temperature capacitance …
Improved channel mobility in 4H-SiC MOSFETs by boron passivation
D Okamoto, M Sometani, S Harada… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We propose another process for fabricating 4H-SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
transistors (MOSFETs) with high channel mobility. The B atoms were introduced into a SiO …
Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide
In this paper, current conduction mechanisms of an atomic-layer-deposited HfO 2 gate
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers
V Tilak, K Matocha, G Dunne - IEEE Transactions on Electron …, 2007 - ieeexplore.ieee.org
Hall-effect measurements of n-channel MOS devices were used to determine the main
scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization …
scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization …
A strong reduction in the density of near-interface traps at the SiO2∕ 4H‐SiC interface by sodium enhanced oxidation
F Allerstam, HÖ Ólafsson, G Gudjonsson… - Journal of Applied …, 2007 - pubs.aip.org
This paper demonstrates how sodium enhanced oxidation of Si face 4 H‐Si C results in
removal of near-interface traps at the Si O 2∕ 4 H‐Si C interface. These detrimental traps …
removal of near-interface traps at the Si O 2∕ 4 H‐Si C interface. These detrimental traps …