Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET
SX Guan, TH Yang, CH Yang, CJ Hong… - npj 2D Materials and …, 2023 - nature.com
The performance enhancement of integrated circuits relying on dimension scaling (ie,
following Moore's Law) is more and more challenging owing to the physical limit of Si …
following Moore's Law) is more and more challenging owing to the physical limit of Si …
Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising
technologies to complement or replace CMOS for ultra-low-power applications, thanks to …
technologies to complement or replace CMOS for ultra-low-power applications, thanks to …
A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors
BH Thai, CH Shih, ND Chien - Journal of Computational Electronics, 2025 - Springer
Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs)
since their operation is based on the mechanism of band-to-band tunneling. This study …
since their operation is based on the mechanism of band-to-band tunneling. This study …
Operation Principle and Fabrication of TFET
Field‐effect transistors, or FETs, are utilized in various electrical applications.
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …
Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy …
Revolutionizing Semiconductor Technology: A Comprehensive Review of FinFET
Theneedfor 3-Dimensional multiple-gate “MOSFETs”, such as “FinFETs”, has risen in recent
years. FinFET is a Double Gated (DG) MOS device that provides good performance since it …
years. FinFET is a Double Gated (DG) MOS device that provides good performance since it …
Exploiting TFET-based technology for energy-efficient STT-MRAM cells
SS Pérez, A Bedoya, LM Prócel… - International Journal of …, 2023 - content.iospress.com
Spin-transfer torque magnetic random-access memory (STT-MRAM) has been
demonstrated to be a leading candidate for on-chip memory technology. In this work, double …
demonstrated to be a leading candidate for on-chip memory technology. In this work, double …