[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Review of gallium-oxide-based solar-blind ultraviolet photodetectors
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
environmental, and biological applications. As one of the emerging ultrawide-bandgap …
β-Ga2O3 for wide-bandgap electronics and optoelectronics
Z Galazka - Semiconductor Science and Technology, 2018 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …
semiconducting oxide, which attracted recently much scientific and technological attention …
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications
X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …
to its critical applications, especially in safety and space detection. A DUV photodetector …
High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
In this work, we report record electron mobility values in unintentionally doped β-Ga 2 O 3
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped …
Donors and deep acceptors in β-Ga2O3
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
2 O 3 through temperature dependent van der Pauw and Hall effect measurements of …
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, K Irmscher, R Uecker, R Bertram… - Journal of Crystal …, 2014 - Elsevier
The growth of bulkx β-Ga 2 O 3 single crystals by the Czochralski method is reported and
discussed in terms of crucial growth conditions and correlated with basic electrical and …
discussed in terms of crucial growth conditions and correlated with basic electrical and …
Scaling-up of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka, R Uecker, D Klimm, K Irmscher… - ECS Journal of Solid …, 2016 - iopscience.iop.org
We present a new approach for scaling-up the growth of β-Ga 2 O 3 single crystals grown
from the melt by the Czochralski method, which has also a direct application to other melt …
from the melt by the Czochralski method, which has also a direct application to other melt …