III–nitrides: Growth, characterization, and properties
SC Jain, M Willander, J Narayan… - Journal of Applied …, 2000 - pubs.aip.org
During the last few years the developments in the field of III–nitrides have been spectacular.
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …
[图书][B] Molecular beam epitaxy: fundamentals and current status
MA Herman, H Sitter - 2012 - books.google.com
Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …
quality semiconductor devices. It discusses the most important aspects of the MBE …
High Thermoelectric zT in n‐Type Silver Selenide films at Room Temperature
JA Perez‐Taborda, O Caballero‐Calero… - Advanced Energy …, 2018 - Wiley Online Library
In this work, a zT value as high as 1.2 at room temperature for n‐type Ag2Se films is reported
grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel …
grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel …
Fabrication and optical properties of semiconductor quantum wells and superlattices
EO Göbel, K Ploog - Progress in Quantum Electronics, 1990 - Elsevier
3.3. 1. Elemental source conventional molecular beam epitaxy 3.3. 2. Metalorganic vapor
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …
Pulsed Hybrid Reactive Magnetron Sputtering for High zT Cu2Se Thermoelectric Films
JA Perez‐Taborda, L Vera… - Advanced Materials …, 2017 - Wiley Online Library
Thermoelectric films on flexible substrates are of interest for the integration of thermoelectric
in wearable devices. In this work, copper selenide films are achieved by a novel low …
in wearable devices. In this work, copper selenide films are achieved by a novel low …
Diffraction-anomalous-fine-structure spectroscopy applied to the study of III-V strained semiconductors
MG Proietti, H Renevier, JL Hodeau, J Garcia, JF Bérar… - Physical Review B, 1999 - APS
The effect of built-in strain on III-V epitaxial semiconductors has been investigated by
extended diffraction anomalous fine structure (EDAFS) at the Ga and As K edges. A general …
extended diffraction anomalous fine structure (EDAFS) at the Ga and As K edges. A general …
Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy
A Georgakilas, P Panayotatos, J Stoemenos… - Journal of applied …, 1992 - pubs.aip.org
2679 J. Appt. Phys. 71 (6), 15 March 1992 0021-8979/92/062679-23 $04.00.@ I 1992
American Institute of Physics 2679 partly to threading dislocation generation during the early …
American Institute of Physics 2679 partly to threading dislocation generation during the early …
Different strategies towards the deterministic coupling of a single quantum dot to a photonic crystal cavity mode
I Prieto, J Herranz, Y González… - 2011 13th …, 2011 - ieeexplore.ieee.org
In this work we show two different procedures of fabrication aiming towards the systematic
positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) …
positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) …
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
VN Jmerik, TV Shubina, AM Mizerov, KG Belyaev… - Journal of crystal …, 2009 - Elsevier
Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality
have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich …
have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich …
Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
P Kidd, DJ Dunstan, HG Colson, MA Louren… - Journal of crystal …, 1996 - Elsevier
In this paper we summarize work carried out to investigate the relaxation of epitaxial strained
layers of InGaAs on GaAs, where the InGaAs composition has been increased throughout …
layers of InGaAs on GaAs, where the InGaAs composition has been increased throughout …