During the last few years the developments in the field of III–nitrides have been spectacular.
High quality epitaxial layers can now be grown by MOVPE. Recently good quality epilayers …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

In this work, a zT value as high as 1.2 at room temperature for n‐type Ag2Se films is reported
grown by pulsed hybrid reactive magnetron sputtering (PHRMS). PHRMS is a novel …

3.3. 1. Elemental source conventional molecular beam epitaxy 3.3. 2. Metalorganic vapor
phase epitaxy (MO VPE) 3.3. 3. Gas-source molecular beam epitaxy 3.3. 4. Modulated beam …

Thermoelectric films on flexible substrates are of interest for the integration of thermoelectric
in wearable devices. In this work, copper selenide films are achieved by a novel low …

The effect of built-in strain on III-V epitaxial semiconductors has been investigated by
extended diffraction anomalous fine structure (EDAFS) at the Ga and As K edges. A general …

2679 J. Appt. Phys. 71 (6), 15 March 1992 0021-8979/92/062679-23 $04.00.@ I 1992
American Institute of Physics 2679 partly to threading dislocation generation during the early …

In this work we show two different procedures of fabrication aiming towards the systematic
positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) …

Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality
have been grown by plasma-assisted molecular beam epitaxy (PA-MBE) under metal-rich …

In this paper we summarize work carried out to investigate the relaxation of epitaxial strained
layers of InGaAs on GaAs, where the InGaAs composition has been increased throughout …