Silicon carbide for integrated photonics
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …
High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform
We report a high-quality 3C-silicon carbide (SiC)-on-insulator (SiCOI) integrated photonic
material platform formed by wafer bonding of crystalline 3C-SiC to a silicon oxide (SiO_2)-on …
material platform formed by wafer bonding of crystalline 3C-SiC to a silicon oxide (SiO_2)-on …
High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing
K Powell, A Shams-Ansari, S Desai, M Austin… - Optics express, 2020 - opg.optica.org
We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon
carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication …
carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication …
High-quality integrated microdisk resonators in the visible-to-near-infrared wavelength range on a 3C-silicon carbide-on-insulator platform
In this Letter, we report, to the best of our knowledge, the first demonstration of high-quality
integrated microdisk resonators (MDRs) on a 3C-silicon carbide-on-insulator (SiCOI) …
integrated microdisk resonators (MDRs) on a 3C-silicon carbide-on-insulator (SiCOI) …
3C-SiC carbonization optimization and void reduction on misoriented Si substrates: from a research reactor to a production scale reactor
M Bosi, C Ferrari, D Nilsson, PJ Ward - CrystEngComm, 2016 - pubs.rsc.org
In this work, we studied how to optimize the carbonization process in order to deposit cubic
SiC (3C-SiC) on misoriented Si substrates. The carbonization process is a key step to obtain …
SiC (3C-SiC) on misoriented Si substrates. The carbonization process is a key step to obtain …
Defect-induced strain relaxation in 3C-SiC films grown on a (100) Si substrate at low temperature in one step
The epitaxial deposition of a 3C-SiC film on a (100) Si substrate has been achieved at low
temperature in one step using the microwave plasma CVD technique. A high density of …
temperature in one step using the microwave plasma CVD technique. A high density of …
Integrated Photonics in Silicon Carbide
KN Powell - 2022 - ses.library.usyd.edu.au
Integrated photonics is a promising technology which has applications in many areas such
as biomedical, aero-space, radar, distributed computing, sensors and high speed signal …
as biomedical, aero-space, radar, distributed computing, sensors and high speed signal …
[PDF][PDF] A LOW-COST HIGH-QUALITY CRYSTALLINE SILICON
T Fan - 2021 - researchgate.net
Figure 3–(a) Cross-sectional scanning electron microscopy (SEM) image of a SiN ridge
waveguide with SiO2 substrate and air cladding. The height of the waveguide is 400 nm …
waveguide with SiO2 substrate and air cladding. The height of the waveguide is 400 nm …
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy
Silicon carbide thin films were synthesised by vapour phase epitaxy technique on silicon
substrates using silane and propane as precursors. Methyltrichlorosilane (MTS) was added …
substrates using silane and propane as precursors. Methyltrichlorosilane (MTS) was added …
Electrical and material characterisation of silicon carbide based resistive memories
J Fan - 2018 - eprints.soton.ac.uk
Resistive memory is widely considered as a promising non-volatile memory to address the
demands for high-density data storage, low power consumption, augment the performance …
demands for high-density data storage, low power consumption, augment the performance …