Recent progress of Ga2O3 power technology: large-area devices, packaging and applications
Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …
field and current density. They are also prerequisites of any power device to survive …
Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu… - … on Power Electronics, 2020 - ieeexplore.ieee.org
In this article, we report on demonstrating the first vertical β-Ga 2 O 3 junction barrier
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …
1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
Ga 2 O 3 power diodes with high voltage/current ratings, superior dynamic performance,
robust reliability, and potentially easy-to-implement are a vital milestone on the Ga 2 O 3 …
robust reliability, and potentially easy-to-implement are a vital milestone on the Ga 2 O 3 …
1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack
of performance evaluation and reliability validation at the system-level applications seriously …
of performance evaluation and reliability validation at the system-level applications seriously …
Superior high temperature performance of 8 kV NiO/Ga 2 O 3 vertical heterojunction rectifiers
NiO/β-Ga2O3 vertical rectifiers exhibit near-temperature-independent breakdown voltages
(VB) of> 8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB) 2/RON …
(VB) of> 8 kV to 600 K. For 100 μm diameter devices, the power figure of merit (VB) 2/RON …
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
Ultrawide-bandgap gallium oxide (Ga 2 O 3) devices have recently emerged as promising
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
Large-size (1.7× 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
F Otsuka, H Miyamoto, A Takatsuka… - Applied Physics …, 2021 - iopscience.iop.org
We fabricated high forward and low leakage current trench MOS-type Schottky barrier
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
The effect of doping in the drift layer and the thickness and extent of extension beyond the
cathode contact of a NiO bilayer in vertical NiO/β-Ga 2 O 3 rectifiers is reported. Decreasing …
cathode contact of a NiO bilayer in vertical NiO/β-Ga 2 O 3 rectifiers is reported. Decreasing …