ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

Abstract β-Ga 2 O 3 is an emerging, ultra-wide bandgap (energy gap of 4.85 eV) transparent
semiconducting oxide, which attracted recently much scientific and technological attention …

Self-powered solar-blind photodetectors based on diamond/β-Ga2O3 heterojunctions have
been fabricated. Under zero bias, these photodetectors show a peak responsivity of 0.2 mA …

Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Abstract Gallium oxide (Ga2O3) is an important wide bandgap transparent conductive oxide
with many excellent properties, which is widely used in many fields such as catalysis …

The effects of post-deposition oxygen annealing temperature on the physical, chemical, and
optical properties of gallium oxide (Ga 2 O 3) films were systematically studied in this work …

This book discusses various aspects of different bulk TSO single crystals in terms of
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …

Abstract β-Ga 2 O 3 films were grown on (0001) sapphire substrates by low-pressure
MOCVD. The effects of growth pressure on the growth rate, surface morphology and optical …

In this paper, high-quality β-Ga2O3 films were grown on silicon substrates by plasma-
enhanced atomic layer deposition (PEALD). Effects of annealing temperature on β-Ga2O3 …

Ga 2 O 3 is an ultra-wide bandgap semiconductor with various advantages but limited by its
low carrier mobility. Utilizing charge separation in heterostructures to improve carrier …