Metal-oxide catalyzed epitaxy (MOCATAXY): The example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1− x) 2O3/β-Ga2O3 heterostructures
We demonstrate a marked increase in the possible growth domain and growth rate of the O
plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x) 2 O 3, by adding the element In …
plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x) 2 O 3, by adding the element In …
Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light …
We demonstrate efficient, polarized and monolithic white semipolar (20–21) InGaN light-
emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template …
emitting diodes (LEDs) grown on high crystal quality 4-inch (20–21) GaN/sapphire template …
Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template
We investigated the electrical and optical performances of semipolar (11-22) InGaN green
µLEDs with a size ranging from 20× 20 µm^ 2 to 100× 100 µm^ 2, grown on a low defect …
µLEDs with a size ranging from 20× 20 µm^ 2 to 100× 100 µm^ 2, grown on a low defect …
Barriers to carrier transport in multiple quantum well nitride-based -plane green light emitting diodes
C Lynsky, AI Alhassan, G Lheureux, B Bonef… - Physical Review …, 2020 - APS
The presence of alloy disorder in III-nitride materials has been demonstrated to play a
significant role in device performance through effects such as carrier localization and carrier …
significant role in device performance through effects such as carrier localization and carrier …
560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
We demonstrate InGaN-based semipolar 560? nm micro-light-emitting diodes with 2.5%
EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and …
EQE on high-quality and low-defect-density (20-21) GaN templates grown on scalable and …
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
E Di Russo, N Cherkashin, M Korytov… - Journal of Applied …, 2019 - pubs.aip.org
Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …
Demonstration of electrically injected semipolar laser diodes grown on low-cost and scalable sapphire substrates
The last two decades have shown an increasing need for GaN-based laser diodes (LDs),
which are currently only grown on bulk GaN substrates, which remain to date very expensive …
which are currently only grown on bulk GaN substrates, which remain to date very expensive …
Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers
ABSTRACT III-nitrides based light-emitting diodes and laser diodes (LDs) have shown great
success as solid-state lighting sources, but the development of common c-plane (0001) …
success as solid-state lighting sources, but the development of common c-plane (0001) …
Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green …
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous
interest within the photonics community in recent past as advantageous replacements for …
interest within the photonics community in recent past as advantageous replacements for …
[HTML][HTML] Atomic-level quantum well degradation of GaN-based laser diodes investigated by atom probe tomography
Gallium nitride (GaN)-based lasers are extensively employed in display, lighting, and
communication applications due to their visible laser emission. Despite notable …
communication applications due to their visible laser emission. Despite notable …