Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

The fabrication processes of high-speed oxide-confined single-mode (SM)-vertical-cavity
surface-emitting lasers (VCSELs) are complex, costly, and often held back by reliability and …

In the quest to find ever better passivation techniques for infrared photodetectors, we explore
several passivation layers using atomic layer deposition (ALD). We compare the impact of …

We report on a low dark current density PBiN extended short-wavelength infrared
photodetector with atomic layer deposited (ALD) A l _2 O _3 passivation based on a …

Abstract The effect of (NH 4) 2 S-based chemical treatment on type-II InAs/GaSb superlattice
has been investigated. X-ray photoelectron spectroscopy and spectroscopic ellipsometry …

In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on
InAs/InAs1− xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 …

We report on a planar long-wavelength infrared photodetector based on InAs/InAs 1-x Sb x
type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular …

Herein, through the analysis of devices with different passivation pretreatment processes, it
is found that after surface corrosion, the optimized process of O3 treatment combined with …

One of the major challenges of antimonide-based devices arises owing to the large number
of surface states generated during fabrication processes. Surface passivation and …

We have investigated the effect of oxidant sources on the performance of InAlN/GaN metal–
oxide–semiconductor high electron mobility transistors (MOS‐HEMTs). We clarified that the …