Area and energy efficient SOT-MRAM bit cell based on 3 transistors with shared diffusion regions
In this brief, we present a novel bit cell structure of spin-orbit-torque magnetic random
access memory (SOT-MRAM) for the reduction of both cell size and write energy …
access memory (SOT-MRAM) for the reduction of both cell size and write energy …
Magnetic tunnel junction random number generators applied to dynamically tuned probability trees driven by spin orbit torque
Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators
(RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs …
(RNGs) can consume orders of magnitude less energy per bit than CMOS pseudo-RNGs …
Analytical Array-Level Comparison of Read/Write Performance Between Voltage Controlled-MRAM and STT-MRAM
Voltage-Controlled Magnetic Random Access Memory (VC-MRAM) is a promising candidate
to improve the performance of Spin Transfer Torque (STT) MRAM, which is highly …
to improve the performance of Spin Transfer Torque (STT) MRAM, which is highly …
Etude de matériaux chalcogénures amorphes et de leurs propriétés de commutation électrique pour la conception de dispositifs sélecteurs dédiés aux mémoires …
A Verdy - 2020 - theses.hal.science
Dans le domaine des mémoires pour la microélectronique, il apparait que les performances
des technologies traditionnelles se font de plus en plus dépasser par les performances de …
des technologies traditionnelles se font de plus en plus dépasser par les performances de …