Junctionless transistors: State-of-the-art

A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

A Anam, SI Amin, D Prasad, N Kumar, S Anand - Micro and Nanostructures, 2023 - Elsevier
In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …

Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for …

N Kumar, A Raman - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-
effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) …

DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique

R Saha, DK Panda, R Goswami… - … Journal of Numerical …, 2022 - Wiley Online Library
In this article, a Ge‐source is employed in split drain Z‐shaped line TFET structure (SD‐ZHP‐
TFET) and named as Ge‐source SD‐ZHP‐TFET. The presence of split drain increases the …

Theoretical Investigation of Dual-Material Stacked Gate Oxide-Source Dielectric Pocket TFET Based on Interface Trap Charges and Temperature Variations

KK Nigam, Dharmender, VA Tikkiwal… - Journal of Circuits …, 2023 - World Scientific
In this paper, the performance of dual-material stacked gate oxide-source dielectric pocket-
tunnel field-effect transistor (DMSGO-SDP-TFET) has been investigated by considering fixed …

GaAs0. 5Sb0. 5/In0. 53Ga0. 47As heterojunction dopingless charge plasma-based tunnel FET for analog/digital performance improvement

A Bhattacharyya, M Chanda, D De - Superlattices and Microstructures, 2020 - Elsevier
A dual side doping-less (DL) GaAs 0.5 Sb 0· 5/In 0. 53 Ga 0. 47 As heterojunction tunnel
FET (DDL-HTFET) configuration together with hetero-gate-dielectric material (HfO 2/SiO 2) …

Impact of channel thickness on the performance of GaAs and GaSb DG-JLMOSFETs: an atomistic tight binding based evaluation

MS Islam, MS Hasan, MR Islam, A Iskanderani… - ieee …, 2021 - ieeexplore.ieee.org
In this paper, the performance of GaAs and GaSb based sub-10 nm double-gate
junctionless metal-oxide-semiconductor field-effect transistors (DG-JLMOSFETs) have been …

Performance investigation and impact of trap charges on novel lateral dual gate oxide-bilateral tunnelling based field effect transistor

P Kwatra, SV Singh, K Nigam - Microelectronics Reliability, 2023 - Elsevier
Tunnel field effect transistors (TFETs) offer advantage of robustness against short channel
effects. However, reliability issues caused by interface trap charges (ITCs) generated during …

Junctionless tunnel field-effect transistor with a modified auxiliary gate, a novel candidate for high-frequency applications

IC Cherik, A Abbasi, SK Maity, S Mohammadi - Micro and Nanostructures, 2023 - Elsevier
In this paper, we propose a novel junctionless tunnel field-effect transistor that uses a
tunneling gate and a modified auxiliary gate. The first one is employed to enhance the …

Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET

J Madan, R Pandey, R Sharma, R Chaujar - Applied Physics A, 2019 - Springer
Abstract Tunnel Field Effect Transistors (TFET) based on quantum mechanical band to band
tunneling (BTBT) are promising alternatives for low power analog applications. Additionally …