Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
A Acharyya, JP Banerjee - Applied Nanoscience, 2014 - Springer
In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
Potentiality of IMPATT devices as terahertz source: an avalanche response time-based approach to determine the upper cut-off frequency limits
A Acharyya, JP Banerjee - IETE Journal of Research, 2013 - Taylor & Francis
Abstract Potentiality of Impact Avalanche Transit Time (IMPATT) devices based on different
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
Effects of tunnelling current on millimetre-wave IMPATT devices
A Acharyya, M Mukherjee… - International Journal of …, 2015 - Taylor & Francis
In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-
wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed …
wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed …
[PDF][PDF] Noise performance of millimeter-wave silicon based mixed tunneling avalanche transit time (MITATT) diode
A Acharyya, M Mukherjee, JP Banerjee - International Journal of …, 2010 - Citeseer
A generalized method for small-signal simulation of avalanche noise in Mixed Tunneling
Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series …
Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series …
[PDF][PDF] Influence of tunnel current on DC and dynamic properties of Si Based terahertz IMPATT source
A Acharyya, M Mukherjee, JP Banerjee - Terahertz Science and …, 2011 - tstnetwork.org
The effect of tunneling current on the high frequency properties of double drift (p+pnn+)
IMPATT devices based on silicon designed to operate at 0.3 THz has been investigated by …
IMPATT devices based on silicon designed to operate at 0.3 THz has been investigated by …
Thz solid-state source based on impatt devices
S Banerjee - Terahertz Biomedical and Healthcare Technologies, 2020 - Elsevier
In recent years, a lot of research interest has been generated for the research and
development of terahertz (THz) components, sources, and detectors because of their various …
development of terahertz (THz) components, sources, and detectors because of their various …
[图书][B] Practical Terahertz Electronics: Devices and Applications, Volume 1: Solid-State Devices and Vacuum Tubes
VK Khanna - 2021 - iopscience.iop.org
This research and reference text provides a comprehensive and authoritative survey of the
state-of-the-art in terahertz electronics research. Covering the fundamentals, operational …
state-of-the-art in terahertz electronics research. Covering the fundamentals, operational …
[PDF][PDF] Diamond based DDR IMPATTs: prospects and potentiality as millimeter-wave source at 94 GHz atmospheric window
A Acharyya, K Datta, R Ghosh, M Sarkar… - …, 2013 - academia.edu
Large-signal simulation is carried out in this paper to investigate the prospects and
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …
[PDF][PDF] Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN
J Pradhan, SK Swain, SR Pattnaik… - Journal of Infrared and …, 2019 - researching.cn
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第 !" 卷第 # 期 $%&' 年 " Л 红外与毫米波学报 !"#$%&'&() *+,,+-".'/(0 12,"!", 32"# 456507,$%&' …
Influence of nonlocality on amplification of space charge waves in n-GaN films
V Grimalsky, S Koshevaya, I Moroz… - … ON PHYSICS AND …, 2010 - ieeexplore.ieee.org
Amplification of space charge waves (SCW) due to the negative differential conductivity
(NDC) in n-GaN films of submicron thicknesses is investigated theoretically. An influence of …
(NDC) in n-GaN films of submicron thicknesses is investigated theoretically. An influence of …