[HTML][HTML] First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlGa)O alloys
JB Varley - Journal of Materials Research, 2021 - Springer
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …
numerous structural phases with unique optoelectronic properties that make them attractive …
(AlxGa1-x) 2O3-based materials: Growth, properties, and device applications
H Li, Z Wu, S Wu, P Tian, Z Fang - Journal of Alloys and Compounds, 2023 - Elsevier
In recent years, the (Al x Ga 1-x) 2 O 3 materials have attracted intense research interest due
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
to their considerable potentials in the fabrication of deep-ultraviolet optoelectronic and high …
Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire
Ultrawide-bandgap semiconductors are ushering in the next generation of high-power
electronics. The correct crystal orientation can make or break successful epitaxy of such …
electronics. The correct crystal orientation can make or break successful epitaxy of such …
[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1− x) 2O3/β-Ga2O3 heterostructure channels
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-
(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3 modulation-doped heterostructures. Electron channel is …
(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3 modulation-doped heterostructures. Electron channel is …
Role of carbon and hydrogen in limiting -type doping of monoclinic
We use hybrid density functional calculations to assess n-type doping in monoclinic (Al x Ga
1− x) 2 O 3 alloys. We focus on silicon, the most promising donor dopant, and study the …
1− x) 2 O 3 alloys. We focus on silicon, the most promising donor dopant, and study the …
[HTML][HTML] Alloyed β-(AlxGa1− x) 2O3 bulk Czochralski single β-(Al0. 1Ga0. 9) 2O3 and polycrystals β-(Al0. 33Ga0. 66) 2O3, β-(Al0. 5Ga0. 5) 2O3), and property trends
In this work, bulk Czochralski-grown single crystals of 10 mol.% Al 2 O 3 alloyed β-Ga 2 O 3—
monoclinic 10% AGO or β-(Al 0.1 Ga 0.9) 2 O 3—are obtained, which show+ 0.20 eV …
monoclinic 10% AGO or β-(Al 0.1 Ga 0.9) 2 O 3—are obtained, which show+ 0.20 eV …
Si doping in MOCVD grown (010) β-(AlxGa1− x) 2O3 thin films
In this work, the structural and electrical properties of metalorganic chemical vapor
deposited Si-doped β-(Al x Ga 1− x) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates …
deposited Si-doped β-(Al x Ga 1− x) 2 O 3 thin films grown on (010) β-Ga 2 O 3 substrates …
[HTML][HTML] Bulk single crystals and physical properties of β-(AlxGa1− x) 2O3 (x= 0–0.35) grown by the Czochralski method
We have systematically studied the growth, by the Czochralski method, and basic physical
properties of a 2 cm and 2 in. diameter bulk β-(Al x Ga 1− x) 2 O 3 single crystal with [Al]= 0 …
properties of a 2 cm and 2 in. diameter bulk β-(Al x Ga 1− x) 2 O 3 single crystal with [Al]= 0 …
Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium
Growths of monoclinic (AlxGa1− x) 2O3 thin films up to 99% Al contents are demonstrated
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …
via metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMGa) as the …