Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices
R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications
We introduce a novel lead-free ferroelectric thin film (1-x) BaTiO3-xBa (Cu1/3Nb2/3) O3 (x=
0.025)(BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) …
0.025)(BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) …
Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications
G Panomsuwan, O Takai, N Saito - Applied Physics A, 2012 - Springer
Abstract Metal–ferroelectric–insulator–semiconductor (MFIS) structures with BaTiO 3 (BTO)
as a ferroelectric film and SrTiO 3 (STO) as an insulating buffer layer were fabricated on p …
as a ferroelectric film and SrTiO 3 (STO) as an insulating buffer layer were fabricated on p …
Commercial molecular beam epitaxy production of high quality SrTiO3 on large diameter Si substrates
X Gu, D Lubyshev, J Batzel, JM Fastenau… - Journal of Vacuum …, 2009 - pubs.aip.org
The authors report on the development of a molecular beam epitaxy production process for
the epitaxial growth of high quality, single crystal, single phase Sr Ti O 3 (STO) films on Si …
the epitaxial growth of high quality, single crystal, single phase Sr Ti O 3 (STO) films on Si …
DyScO3 buffer layer for a performing metal-ferroelectric-insulator-semiconductor structure with multiferroic BiFeO3 thin film
NM Murari, R Thomas, SP Pavunny… - Applied Physics …, 2009 - pubs.aip.org
Metal-ferroelectric-insulator-semiconductor structures with a BiFeO 3 ferroelectric layer and
DyScO 3 insulating buffer layer were fabricated and characterized. BiFeO 3 film was …
DyScO 3 insulating buffer layer were fabricated and characterized. BiFeO 3 film was …
Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN
WB Luo, J Zhu, H Chen, XP Wang, Y Zhang… - Journal of Applied …, 2009 - pubs.aip.org
Epitaxial SrTiO 3 films were fabricated by laser molecular beam epitaxy on bare and TiO 2
buffered GaN (0002), respectively. The whole deposition processes were in situ monitored …
buffered GaN (0002), respectively. The whole deposition processes were in situ monitored …
Metal (Pt)/ferroelectric (SrBi2Ta2O9)/insulator (La2O3)/semiconductor (Si), MFIS structures for nonvolatile memory applications
SK Rathaur, R Khosla, SK Sharma - Applied Physics Letters, 2021 - pubs.aip.org
Extended data retention is a cardinal impediment for ferroelectric memories and serves a
pivotal role for nonvolatile memory applications. Here, nonvolatile Metal–Ferroelectric …
pivotal role for nonvolatile memory applications. Here, nonvolatile Metal–Ferroelectric …
Epitaxial fabrication and memory effect of ferroelectric LiNbO3 film/AlGaN/GaN heterostructure
L Hao, J Zhu, W Luo, H Zeng, Y Li, W Huang… - Applied Physics …, 2009 - pubs.aip.org
A metal-ferroelectric-semiconductor structure was fabricated epitaxially by depositing a
LiNbO 3 film on the surface of the AlGaN/GaN template with two dimensional electron gas …
LiNbO 3 film on the surface of the AlGaN/GaN template with two dimensional electron gas …
HfO2–Al2O3 dielectric layer for a performing metal–ferroelectric–insulator–semiconductor structure with a ferroelectric 0.5 Ba (Zr0. 2Ti0. 8) O3-0.5 (Ba0. 7Ca0. 3) TiO3 …
In this work, the ferroelectric and fatigue characteristics of Au/0.5 Ba (Zr0. 2Ti0. 8) O3-0.5
(Ba0. 7Ca0. 3) TiO3 (BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are …
(Ba0. 7Ca0. 3) TiO3 (BCZT)/Si metal–ferroelectric–semiconductor (MFS) structures are …
The electrical and switching properties of a metal-ferroelectric (Bi3. 15Nd0. 85Ti3O12)-insulator (Y2O3-stabilized ZrO2)-silicon diode
Y Zhang, XL Zhong, JB Wang, HJ Song, Y Ma… - Applied Physics …, 2010 - pubs.aip.org
Y. Zhang, XL Zhong, JB Wang, HJ Song, Y. Ma, YC Zhou; The electrical and switching
properties of a metal-ferroelectric (Bi 3.15 Nd 0.85 Ti 3 O 12)-insulator ( Y 2 O 3-stabilized …
properties of a metal-ferroelectric (Bi 3.15 Nd 0.85 Ti 3 O 12)-insulator ( Y 2 O 3-stabilized …