Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat
Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is
a promising approach for sub-10-nm surface patterning. DSA requires the control of …
a promising approach for sub-10-nm surface patterning. DSA requires the control of …
Method of producing structure containing phase-separated structure, method of forming pattern, and top coat material
T Matsumiya, T Seshimo, K Ohmori, K Miyagi… - US Patent …, 2015 - Google Patents
A method of producing a structure containing a phase-separated structure, including
forming, on a substrate, a layer containing a block copolymer having a block of a polyhedral …
forming, on a substrate, a layer containing a block copolymer having a block of a polyhedral …
Neutral layer polymers, methods of manufacture thereof and articles comprising the same
P Trefonas III, PD Hustad, D Wang, R Sharma… - US Patent …, 2016 - Google Patents
Disclosed herein is a block copolymer comprising a first segment and a second segment
that are covalently bonded to each other and that are chemically different from each other; …
that are covalently bonded to each other and that are chemically different from each other; …
Method of forming topcoat for patterning
Disclosed is a method for the fabrication of polymeric topcoat via initiated chemical vapor
deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with …
deposition (iCVD) or photoinitiated chemical vapor deposition (piCVD) in conjunction with …
Orientation control layer formed on a free top surface of a first block copolymer from a mixture of first and second block copolymers
P Trefonas III, D Wang, R Sharma, PD Hustad… - US Patent …, 2017 - Google Patents
Disclosed herein is a method comprising disposing a first composition comprising a first
block copolymer upon a substrate; where the first block copolymer comprises a first segment …
block copolymer upon a substrate; where the first block copolymer comprises a first segment …
Polylactide/silicon-containing block copolymers for nanolithography
The present invention includes a diblock copolymer sys tem that self-assembles at very low
molecular weights to form very Small features. In one embodiment, one polymer in the block …
molecular weights to form very Small features. In one embodiment, one polymer in the block …
Silicon dot formation by direct self-assembly method for flash memory
CM Chen, CT Lee, SY Wang, CY Yu, CS Tsai… - US Patent …, 2016 - Google Patents
Some embodiments of the present disclosure relate to a method that achieves a
substantially uniform pattern of dis crete storage elements comprising a Substantially equal …
substantially uniform pattern of dis crete storage elements comprising a Substantially equal …
Method for fabricating columnar or lamellar structures of organic molecules aligned into large-area single domain
METHOD FOR FABRICATING COLUMNAR Korean Patent No. 1252506 discloses a
polyacetylene OR LAMELLAR STRUCTURES OF supramolecular sieve having selectivity …
polyacetylene OR LAMELLAR STRUCTURES OF supramolecular sieve having selectivity …
Silicon dot formation by self-assembly method and selective silicon growth for flash memory
CM Chen, TY Chen, CT Lee, SY Wang, CY Yu… - US Patent …, 2016 - Google Patents
Some embodiments of the present disclosure relate to a method that achieves a
substantially uniform pattern of dis crete storage elements within a memory cell. A copolymer …
substantially uniform pattern of dis crete storage elements within a memory cell. A copolymer …
Polymer brush reflow for directed self-assembly of block copolymer thin films
A method comprises forming a first structured pattern having a first line width on a substrate.
A polymer brush is deposited on the structured pattern, which is annealed a first time at a …
A polymer brush is deposited on the structured pattern, which is annealed a first time at a …