An embodiment is to include an inverted Staggered (bottom gate structure) thin film
transistorin which an oxide semicon ductor film containing In, Ga, and Zn is used as a …

(56) References Cited 2008.0006877 A1 1/2008 Mardilovich et al. 2008.0038882 A1 2/2008
Takechi et al. US PATENT DOCUMENTS 2008.0038929 A1 2/2008 Chang 2008/0050595 …

An embodiment is to include an inverted Staggered (bottom gate structure) thin film
transistor in which an oxide semi conductor film containing In, Ga, and Zn is used as a …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semiconduc tor …

An object is to provide a method for manufacturing a highly reliable semiconductor device
including thin film transistors which have stable electric characteristics and are formed using …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semiconduc tor …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semiconduc tor …

An object is to provide a method for manufacturing a highly reliable semiconductor device
including thin film transistors which have stable electric characteristics and are formed using …

To provide a semiconductor device including a thin film transistor having excellent electric
characteristics and high reliability and a manufacturing method of the semiconductor device …

It is an object to provide a semiconductor device including a thin film transistor with favorable
electric properties and high reliability, and a method for manufacturing the semi conductor …