(57) ABSTRACT A deposition system can conduct ALD or CVD deposition and can switch
between the deposition modes. The system is capable of depositing multi-metal films and …

The atomic layer technique is generating a lot of excitement and study due to its profound
physics and enormous potential in device fabrication. This article reviews current …

We investigate the integration of Al 2 O 3 high-k dielectric on two-dimensional (2D) crystals
of boron nitride (BN) and molybdenum disulfide (MoS 2) by atomic layer deposition (ALD) …

We report on the successful integration of low-cost, conformal, and versatile atomic layer
deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is …

Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer
deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO 2 gate insulators …

Magnetic tunnel junctions (MTJs), formed through sandwiching an ultrathin insulating film
(so-called tunnel barrier or TB), with ferromagnetic metal electrodes, are fundamental …

Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range
of 2.20–4.40 nm were fabricated using in vacuo sputtering and atomic layer deposition …

We report the development of a novel portable atomic layer deposition chemical vapor
deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of …

Uniform Al 2 O 3 tunnel barriers are fabricated with atomic layer deposition. The tunneling
magnetoresistance in optimized Al 2 O 3-based magnetic tunnel junctions is studied as a …

Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in
order to enhance spin-to-charge conversion mechanisms, paving the way toward highly …