As the rapid pace of Moore's Law has been slowing down, there has been intense activity to
“reinvent the transistor.” An emerging paradigm is to complement the existing …

Spintronic devices that utilize spin transfer torque are promising for integrated memory
applications. However, these devices face substantial energy consumption challenges due …

We study an electric field-induced redox reaction at the interface of GdOx/Co thin film, by
means of soft X-ray absorption spectroscopy (XAS). The fluorescence-yield depth-resolved …

Since Internet of Things devices should ideally be self-powered, there is great demand for
devices with ultra-low operating voltages that can run on energy harvested from a noisy …

Based on micromagnetic simulations, magnetization switching in a triangle magnetic
element by voltage control of the magnetic anisotropy and Dzyaloshinskii-Moriya interaction …

The impact of spin-transfer torque (STT) on the write-error rate of a voltage-torque-based
magnetoresistive random-access memory is theoretically analyzed by use of the macrospin …

The insertion effect of an interface NiO layer on magnetism in Fe/BaTiO 3 is investigated by
X-ray absorption spectroscopy (XAS). From X-ray magnetic circular dichroism (XMCD) …

The voltage controlled magnetic switching effect is verified experimentally. The Landau–
Lifshitz–Gilbert (LLG) equation is used to study the voltage controlled magnetic switching. It …

The aim of the following project was to investigate novel methods of creating magnetic
random access memories (MRAM) in the context of low operating currents and power saving …