This chapter discusses the device potential of silicon molecular beam epitaxy (Si-MBE). It
deals with silicon-only epitaxial structures and considers possible applications of the abrupt …

Experimental and theoretical results are presented on a bulk-barrier transistor (BBT). In this
device the charge-carrier transportation is determined by an energy barrier, which is located …

A distinctive feature in the development of solid-state electronic devices has been the long
time interval that has usually elapsed between the initial conception of the device, and its …

The recently observed, current controlled, negative resistance behaviour in a novel bulk
GaAs structure is analysed using the basic charge neutrality and carrier transport equations …

Triangular barrier diodes have been fabricated in silicon using molecular beam epitaxy
(MBE). The extreme profile changes necessary for these devices are realized by growing the …

The transient analysis of a triangular-barrier bulk unipolar diode (TB) is based on the
conduction currents associated with both the majority and minority carriers together with a …

A new hydrogenated amorphous silicon/silicon carbide heterojunction bulk unipolar diode
(HEBUD) has been successfully fabricated. The sawtooth-shaped composition wave of α …

Contents This paper presents an analytical model for the dc electrical behavior of bulk
barrier diodes (BBD's). The proposed model extends previously published models, and …

In this paper, we propose, analyze and demonstrate a high-purity float-zone (FZ) silicon
phototransistor operating at the punch through state with high linearity and sensitivity. Those …

A novel vacuum microelectronic electron emitter has been demonstrated in GaAs by using a
planar-doped-barrier (PDB) structure. Emitted electrons are collected in high vacuum by a …