Efficient infrared light emitters integrated on the mature Si technology platform could lead to
on-chip optical interconnects as deemed necessary for future generations of ultrafast …

Defects influence the properties and functionality of all crystalline materials. For instance,
point defects participate in electronic (eg carrier generation and recombination) and optical …

A method for inclusion of strain into the tight-binding Hamiltonian is presented. This
approach bridges from bulk strain to the atomistic language of bond lengths and angles, and …

We present a generalized and flexible plane-wave based implementation of the multiband k·
p formalism to study the electronic properties of semiconductor nanostructures. All …

Numerical calculations of excitonic properties of novel nanostructures, such as nanowire
and crystal phase quantum dots, must combine atomistic accuracy with an approachable …

Using continuum elasticity theory and an eight-band k· p formalism, we study the electronic
properties of GaN nanowires with axial In x Ga1–x N insertions. The three-dimensional …

Nanowire quantum dots have peculiar electronic and optical properties. In this work we use
atomistic tight binding to study excitonic spectra of artificial molecules formed by a double …

The bright exciton splitting in nanosystems and its origins are of primary importance for
quantum-dot-based entangled-photon-pair generation. In this paper, I investigate excitonic …

Carrier localization effects in III-N heterostructures are often studied in the frame of modified
continuum-based models utilizing a single-band effective mass approximation. However …

The vertical electric field response of dark-and bright-excitonic fine structures in self-
assembled quantum dots remains largely unexplored. Using an atomistic tight-binding …