High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …

In this letter, we demonstrated-Ga2O3 lateral Schottky barrier diodes (SBDs) with
breakdown voltage (BV) over 10 kV via anode engineering techniques. Post-anode …

In this work, we demonstrated the enhancement mode (E-mode) β-Ga 2 O 3 metal–oxide–
semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) …

The growing interest for power electronics devices demands suitable materials which can
perform in harsh conditions. Gallium oxide (Ga 2 O 3 \left(Ga\right)_2\left(O\right)_3) has …

Abstract Gallium Oxide (Ga 2 O 3) holds significant potential for the next generation of
electronic devices following SiC and GaN due to its ultra-wide bandgap of approximately 4.5 …

This Letter demonstrates a high-performance 3.3 kV-class β-Ga 2 O 3 vertical heterojunction
diode (HJD) along with an investigation into its off-state leakage mechanism. The vertical β …

Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …

Due to its high critical breakdown electrical field and the availability of large-scale single
crystal substrates, Gallium oxide (Ga 2 O 3) holds great promise for power electronic and …

We investigated the effect of post-deposition annealing on the electrical characteristics of
SiO 2/β-Ga 2 O 3 (001) MOS structures. While oxygen annealing effectively improves the …