The SRAM cells are used in many biomedical applications such as Pace makers, ECG
devices, body area networks etc., where power consumption will be the main constraint. The …

This paper presents an 11 transistor (SEHF11T) static random access memory (SRAM) cell
with high read static noise margin (RSNM) and write static noise margin (WSNM). It …

Graphene nanoribbon and transition metal dichalcogenide field‐effect transistors (GNRFETs
and TMDFETs) have emerged as favorable candidates to replace conventional metal‐oxide …

The modern system‐on‐chips require stable and low‐power SRAM cells due to technology
scaling and limited sources of energy. Therefore, a stability‐and power‐improved 11T …

The main aim of device scaling or usage of different technology is to reduce power. The
major problem with technology scaling is power dissipation and stability of the device …

This paper presents a robust low‐power 10T SRAM cell (RLP10T) with a novel read/write
assist mechanism, improving both read static noise margin (RSNM) and write static noise …

In aerospace applications, the conventional Static Random Access Memories (SRAMs) are
facing high soft error problems like a single event upset. Several radiation-hardened based …

The use of graphene nano-ribbon field-effect transistors (GNRFETs) in the nanoscale
circuits design is challenging because there are several adjustable parameters that need to …

In advanced technology, static random‐access memory (SRAM) cells used in space are
highly sensitive to charge variations caused by high‐energy particle strikes, which cause …

The conventional 8T SRAM cell with isolated read port is suggested as an alternative to
overcome the read‐write conflicts associated with 6T SRAM cell. However, in near threshold …