Boundary conditions for open quantum systems driven far from equilibrium
WR Frensley - Reviews of Modern Physics, 1990 - APS
This is a study of simple kinetic models of open systems, in the sense of systems that can
exchange conserved particles with their environment. The system is assumed to be one …
exchange conserved particles with their environment. The system is assumed to be one …
Resonant tunneling diodes: Models and properties
JP Sun, GI Haddad, P Mazumder… - Proceedings of the …, 1998 - ieeexplore.ieee.org
The resonant tunneling diode (RTD) has been widely studied because of its importance in
the field of nanoelectronic science and technology and its potential applications in very high …
the field of nanoelectronic science and technology and its potential applications in very high …
nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
Z Ren, R Venugopal, S Goasguen… - … on Electron Devices, 2003 - ieeexplore.ieee.org
A program to numerically simulate quantum transport in double gate metal oxide
semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's …
semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's …
Nonequilibrium Green's-function method applied to double-barrier resonant-tunneling diodes
The effect of inelastic scattering on quantum electron transport through double-barrier
resonant-tunneling structures with large cross-sectional areas is studied numerically using …
resonant-tunneling structures with large cross-sectional areas is studied numerically using …
Inelastic scattering in resonant tunneling
NS Wingreen, KW Jacobsen, JW Wilkins - Physical Review B, 1989 - APS
The exact resonant-tunneling transmission probability for an electron interacting with
phonons is presented in the limit that the elastic coupling to the leads is independent of …
phonons is presented in the limit that the elastic coupling to the leads is independent of …
Physics-based RTD current-voltage equation
JN Schulman, HJ De Los Santos… - IEEE Electron Device …, 1996 - ieeexplore.ieee.org
An analytic expression for the current-voltage characteristics of resonant tunneling diodes is
derived from basic principles. The form is ideal for insertion into circuit simulation models. It …
derived from basic principles. The form is ideal for insertion into circuit simulation models. It …
Resonant tunneling with electron-phonon interaction: an exactly solvable model
NS Wingreen, KW Jacobsen, JW Wilkins - Physical review letters, 1988 - APS
The probability for resonant tunneling through a quantum well is calculated for a model
including electron-phonon coupling. The interaction of the tunneling electron with optic …
including electron-phonon coupling. The interaction of the tunneling electron with optic …
Quantitative simulation of a resonant tunneling diode
Quantitative simulation of an InGaAs/InAlAs resonant tunneling diode is obtained by relaxing
three of the most widely employed assumptions in the simulation of quantum devices. These …
three of the most widely employed assumptions in the simulation of quantum devices. These …
Scaling for quantum tunneling current in nano-and subnano-scale plasmonic junctions
P Zhang - Scientific reports, 2015 - nature.com
When two conductors are separated by a sufficiently thin insulator, electrical current can flow
between them by quantum tunneling. This paper presents a self-consistent model of …
between them by quantum tunneling. This paper presents a self-consistent model of …
Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures
KL Jensen, FA Buot - Physical review letters, 1991 - APS
Intrinsic high-frequency oscillations (≊ 2.5 THz) in current and corresponding quantum-well
density have been simulated for the first time for a fixed-bias voltage in the negative …
density have been simulated for the first time for a fixed-bias voltage in the negative …