We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …

A high-performance and broadband heterojunction photodetector has been successfully
fabricated. The heterostructure device is based on a uniform and pinhole-free perovskite film …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

We show that a quantitative description of the conduction band in Ga (In) NAs is obtained by
combining the experimentally motivated band anticrossing model with detailed calculations …

We present a comprehensive theoretical and experimental analysis of 1.3-μm
InGaAsN/GaAs lasers. After introducing the 10-band k/spl middot/p Hamiltonian which …

A brief review on the present knowledge of the electronic properties of the Ga (In) NAs
ternary and quaternary alloys is given mainly from an experimental perspective. The …

We derive an analytical model to describe the conduction-band states of GaNAs-based
quantum well structures, including the band anticrossing effect between N resonant states …

Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications
in optoelectronics. However, for halide perovskites—the leading class of emerging …