Novel MOS-cell Engineered 4.5 kV Enhanced-planar IGBT Device for Improved Short-Circuit Capability
G Gupta, T Schaer, J Jones… - PCIM Europe 2023; …, 2023 - ieeexplore.ieee.org
This paper presents a novel MOS-cell engineered 4.5 kV planar IGBT device for improved
short-circuit capability without adversely affecting its on-state losses. The capability of new …
short-circuit capability without adversely affecting its on-state losses. The capability of new …